? 2003 ixys all rights reserved m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.5 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 50 a v gs = 0 v t j = 125 c3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 74 m ? note 1 ds99077(08/03) hiperfet tm power mosfet n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr IXFN66N50Q2 v dss = 500 v i d25 = 66 a r ds(on) = 74 m ? ? ? ? ? t rr 250 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c66a i dm t c = 25 c, pulse width limited by t jm 264 a i ar t c = 25 c66a e ar t c = 25 c75mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1 minute 2500 v s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features z l double metal process for low gate resistance z minibloc, with aluminium nitride isolation z unclamped inductive switching (uis) rated z low package inductance z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies z dc choppers z pulse generators advantages z easy to mount z space savings z high power density preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. IXFN66N50Q2 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 30 44 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 270 pf t d(on) 32 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 16 ns t d(off) r g = 1 ? (external) 60 ns t f 12 ns q g(on) 199 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 42 nc q gd 92 nc r thjc 0.17 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 66 a i sm repetitive; 264 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.0 c i rm 10 a i f = 25a -di/dt = 100 a/ s v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % minibloc, sot-227 b outline m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
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